紫外写入技术制备光波导器件研究  

Fabrication of Optical Waveguide Devices with UV-Writing Technology

作　　者：吴远大[1] 夏君磊[1] 安俊明[1] 李建光[1] 王红杰[1] 胡雄伟[1] 

机构地区：[1]中国科学院半导体研究所光电研发中心,北京100083

出　　处：《Journal of Semiconductors》2006年第4期744-746,共3页半导体学报（英文版）

基　　金：国家自然科学基金资助项目(批准号:60477035;60507006)~~

摘　　要：研究了采用PECVD方法生长的Si基SiO2波导材料的光敏特性.经过高压载氢处理,利用KrF准分子激光脉冲(工作波长为248nm)在波导材料中诱导出的折射率变化量达到0.005,相对值约增加0.34%.详细研究了紫外光诱导出的折射率变化沿样品深度方向的分布情况.最后,采用紫外写入法在PECVD方法生长的Si基SiO2波导芯层中制备出了单模波导和Y分束器样品,并观测到了通光现象,实测结果与模拟结果一致.The photosensitivity of commercial Si/SiO2 waveguide materials prepared by PECVD is studied. After exposure to high-pressure hydrogen, the as-deposited films are irradiated with excirner-laser pulses operating at 248nm. The change in the induced relative refractive index is about 0.34%. The sectional index distribution of UV-writing waveguides is investigated in detail. Finally,single-mode optical waveguides and Y-splitters are fabricated from silica-based planar optical waveguides with UV-writing technology with a silicon mask. The test results agree with the simulation results.

关 键 词：紫外写入技术 折射率 光波导 分束器 

分 类 号：TN252[电子电信—物理电子学]