Co和Cu薄膜电学特性和连续性特征的判据  

Electrical properties and characteristic criterion of continuity of Co and Cu thin films

作　　者：范平[1] 易葵[2] 邵建达[2] 齐红基[2] 范正修[2] 

机构地区：[1]深圳大学理学院,深圳518060 [2]中国科学院上海光学精密机械研究所光学薄膜技术研发中心,上海201800

出　　处：《中国有色金属学报》2006年第4期651-656,共6页The Chinese Journal of Nonferrous Metals

基　　金：国家高技术研究计划资助项目(2004AA847060);深圳市科技计划资助项目(200319)

摘　　要：采用离子束溅射沉积了不同厚度的Co膜和Cu膜,利用四电极法测量了薄膜的电阻率,从而得到了Co膜和Cu膜的电导率随薄膜厚度的变化关系。实验结果表明,Co膜和Cu膜的电学特性都具有明显的尺寸效应。比较了同时考虑表面散射和晶界散射的电导理论得到的电导率公式与实验结果,不同薄膜厚度电导率的理论结果与实验结果符合较好。提出了厚度作为金属薄膜生长从不连续膜进入连续膜的一个特征判据,并利用原子力显微镜(AFM)观测了膜厚在特征厚度附近的Co膜和Cu膜的表面形貌。The Co and Cu films with different thickness were prepared by ion-beam sputtering. The resistivities of films were measured by the four-probe technique. The relationships between electric conductivity and thickness of Co and Cu films are gotten. The results show that the electrical properties of Co and Cu films have obvious size effect. The comparison of the theoretical results of the model proposed by Fan with the experimental results indicates that the calculated results by theory agree well with the experimental results. The characteristic thickness was proposed to use as the characteristic criterion of the growth of metal films from discontinuous to continuous. The morphologies of surfaces of Co and Cu films near characteristic thickness were studied by atomic force microscopy （AFM）.

关 键 词：Co薄膜 Cu薄膜 金属材料 电学特性 

分 类 号：O484[理学—固体物理]