大功率IGBT过压与过热的分析计算及其对策  

Analysis and Simulation as well as Countermeasures against Over-voltage and Over-heat of High Power IGBT

作　　者：陆广香[1] 沈国荣[2] 陈泉[1] 陆子见[1] 

机构地区：[1]东南大学,江苏南京210096 [2]国电自动化研究院/南瑞集团公司,江苏南京210003

出　　处：《电力电子技术》2006年第2期119-121,共3页Power Electronics

基　　金：国家自然科学基金资助项目(50477020);江苏省高技术研究项目(BG2004039)~~

摘　　要：结合150kVA超导线圈和锂电池-电容组合式SVG-APF的研制工作,首先剖析了IGBT的内部结构,详细讨论了杂散电感引起的过电压以及对容性母线的设计,最后分析了IGBT通态损耗和开关损耗引起的过热问题,给出了计算实例和实验结果。This paper introduces several key points in developing an 380V/150kVA superconductor coil and lithium battery-capacitor SVG-APF.First the detail structure of an IGBT is presented,then minute discussion is given about the over-voltage induced by stray inductance and the design of a capacitor bus,finally the forward power dissipation and switching losses of IGBT and the relevant over-heat are analyzed,a simulation example is given also.

关 键 词：电力半导体器件/绝缘栅双极晶体管 半导体特性 超导线圈 

分 类 号：TM725[电气工程—电力系统及自动化]