Effect of substrate temperature on microstructural and optical properties of ZnO films grown by pulsed laser deposition  

作　　者：HE Jianting ZHUANG Huizhao XUE Chengshan WANG Shuyun HU Lijun XUE Shoubin 

机构地区：[1]Institute of Semiconductor, Shandong Normal University, Jinan 250014, China

出　　处：《Rare Metals》2006年第2期161-165,共5页稀有金属（英文版）

基　　金：This work was financially supported by the Key Research Program of National Natural Science Foundation of China (No. 90301002 and No. 90201025)

摘　　要：ZnO thin films were deposited on n-Si （111） at various substrate temperatures by pulsed laser deposition （PLD）. X-ray diffraction （XRD）, photoluminescence （PL）, Fourier transform infrared spectrophotometer （FTIR）, and scanning electron microscopy （SEM） were used to analyze the structure, morphology, and optical property of the ZnO thin films. An optimal crystallized ZnO thin film was obtained at the substrate temperature of 600℃. A blue shift was found in PL spectra due to size confinement effect as the grain sizes decreased. The surfaces of the ZnO thin films were more planar and compact as the substrate temperature increased.ZnO thin films were deposited on n-Si （111） at various substrate temperatures by pulsed laser deposition （PLD）. X-ray diffraction （XRD）, photoluminescence （PL）, Fourier transform infrared spectrophotometer （FTIR）, and scanning electron microscopy （SEM） were used to analyze the structure, morphology, and optical property of the ZnO thin films. An optimal crystallized ZnO thin film was obtained at the substrate temperature of 600℃. A blue shift was found in PL spectra due to size confinement effect as the grain sizes decreased. The surfaces of the ZnO thin films were more planar and compact as the substrate temperature increased.

关 键 词：semiconductor materials ZnO thin film PLD hexagonal wurtzite structure 

分 类 号：TN304.21[电子电信—物理电子学]