一种Flash存储器静态负载平衡策略  

Static wear-leveling strategy for flash memory

作　　者：张骏[1] 樊晓桠[1] 刘松鹤[2] 

机构地区：[1]中国航空工业总公司航空微电子技术研究与培训中心,陕西西安710072 [2]长安大学信息工程学院,陕西西安710064

出　　处：《计算机应用》2006年第5期1205-1207,共3页journal of Computer Applications

基　　金：国家"十五"预研基金资助项目(41308010307)

摘　　要：Flash存储器是常用的存储器件,它的不挥发特性、灵活轻便、低功耗特性等特点为嵌入式系统、移动计算机提供了良好的条件。然而,Flash存储器必须先擦除后写入,这对存储系统的设计提出了挑战。更重要的是,它的擦除次数是有限制的。分析了Flash存储器数据存储结构和物理特性,提出了一种触发式数据分类静态负载平衡策略,并在此基础上作了基于VHDL语言的仿真,收到了较好的效果。Flash Memory is a kind of common storage device. Its characteristics of flexibility, low power, and so on offer excellent qualifications for embedded system and mobile system. But Flash Memory must be wrote after erasure operation, which brings forward challenge for storage system designer. The most important thing is that the erasure operation times are very limitable. The data structure and physical characteristics were analysed. And a static wear-leveling strategy based on classifying data with trigger condition was brought forward. An experiment was carried out to simulate this strategy using VHDL. As a result, this strategy improves the wear-leveling rate.

关 键 词：FLASH 静态负载平衡 仿真 

分 类 号：TP303[自动化与计算机技术—计算机系统结构]