Pt/CdSSchottky势垒紫外探测器的研制  

The Development of Pt/CdS Schottky Barrier Ultraviolet Detector

作　　者：秦强[1] 朱惜辰[1] 杨文运[1] 

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2006年第4期234-237,共4页Infrared Technology

摘　　要：介绍了Pt/CdS金属半导体接触Schottky势垒形成及In/CdS的欧姆接触工艺研究,由此制成了紫外探测器。测试了探测器的I-V特性,零偏下的光谱响应和器件的频率响应。观察了器件的反偏响应情况。获得的探测器在λ=440 nm处加两伏反偏时的响应率为0.17A/W,内量子效率最大可达64%。Studied the obtaining of Schottky barrier about Pt/CdS contact and ohm contact about In/CdS, and made ultraviolet detector on it. Have measured the I-Vcharacteristic of detector and spectral responsivity and frequency responsivity under 0 V bias. The responsivity of divise under reverse bias is observed. The detector responsivity is measured as 0.17 A/W at a wavelenghth of 440 nm under a 2 V reverse bias, achieved maximal quantum efficiency 64%.

关 键 词：紫外探测器 肖特基势垒 CDS 

分 类 号：TN23[电子电信—物理电子学]