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作 者:阳秀[1] 黎威志[1] 钟志有[1] 蒋亚东[1]
机构地区:[1]电子科技大学光电信息学院,四川成都610054
出 处:《半导体光电》2006年第2期161-163,209,共4页Semiconductor Optoelectronics
基 金:部级预研基金资助项目(51402040205)
摘 要:采用聚乙烯基咔唑(PVK)作为空穴传输层,8-羟基喹啉铝(Alq3)作为发光层,制备了结构为ITO/PVK/Alq3/Mg∶Ag/Al的有机发光二极管(OLED),通过测试器件的电流?电压?发光亮度特性,研究了空穴传输层厚度对OLED器件性能的影响,优化了器件功能层的厚度匹配。实验结果表明,OLED的光电性能与空穴传输层的厚度密切相关,空穴传输层厚度为15 nm时,OLED器件具有最低的启亮电压,最高的发光亮度和最大的发光效率。Using a spinning polymer layer of poly (N-vinylcarbazole) (PVK) as hole transport layer (HTL) and an evaporated layer of tris(8-hydroxy)quinoline aluminum (Alq3) as electron transport layer and emission layer,the organic light-emitting diodes (OLEDs) with the structure of ITO/PVK/Alq3/Mg : Ag/Al have been fabricated. By measuring and analyzing the current-voltage-brightness characteristics, influences of the thickness of HTL on device performance have been investigated. The experimental results show that optical and electrical properties of the devices are closely related to the thickness of HTL, and the device with HTL layer thickness of 15 nm has the best performances, such as the lowest turn-on voltage, highest brightness and maximal luminance efficiency.
分 类 号:TN383[电子电信—物理电子学]
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