衬底表面生长Pb膜的量子尺寸效应及驰豫结构研究  

The Study of Quantum Dimension Effect and Relaxation Construction to Growing Pb Thin Film in the Substrate Surface

作　　者：宋友林[1] 文生辉[1] 王三军[1] 

机构地区：[1]河南教育学院物理系,河南郑州450014

出　　处：《河南教育学院学报（自然科学版）》2006年第1期6-8,共3页Journal of Henan Institute of Education(Natural Science Edition)

摘　　要：项目主要研究在半导体和金属衬底上生长Pb薄膜时的量子尺寸效应,即纳米量级的厚度对薄膜生长规律的影响,进而探讨量子尺寸效应对驰豫结构的影响.这是当前凝聚态物理中两个重要方向———量子尺寸效应和薄膜驰豫结构的交叉点.到目前为止,还没有发现有人开展这样的工作.因此,该项目的研究必将会对凝聚态物理的发展产生一定的影响.The main study of the item is quantum dimension effect of the Pb film growth in the metallic and semiconductor membrane, which is the thickness of nanometer magnitude to the rule of the film growth. And we will study the influence of the quantum dimsension effect to the relaxation construction in the item. At the present time , this is a crosspoint of two important direction, which are quantum dimension effect and relaxation construction, in the condensed physics. We notice up to now this job hasn＇ t been proceeded. So the study of the item will produce some influence to the development of the condensed physics.

关 键 词：量子尺寸效应 驰豫 密度泛函理论 

分 类 号：O484.1[理学—固体物理]