Stochastic Resonance in Quantum-Well Semiconductor Lasers  

作　　者：王俊 马骁宇 白一鸣 曹力 吴大进 

机构地区：[1]National Engineering Research Center for Opto-Electronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 [2]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 [3]Department of Physics, Huazhong University of Science and Technology, Wuhan 430074

出　　处：《Chinese Physics Letters》2006年第5期1106-1109,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 10275025.

摘　　要：The quantum well （QW） semiconductor lasers have become main optical sources for optical fibre communication systems because of their higher modulation speed, broader modulation bandwidth and better temperature characteristics. In order to improve the quality of direct-modulation by means of the stochastic resonance （SR） mechanism in QW semiconductor lasers, we investigate the behaviour of the SR in dlrect-modulated QW semiconductor laser systems. Considering the cross-correlated carrier noise and photon noise, we calculate the power spectrum of the photon density and the signal-to-noise ratio （SNR） of the direct-modulated laser system by using the linear approximation method. The results indicate that the SR always appears in the dependence of the SNR on the bias current density, and is strongly affected by the cross-correlation coefficient of the carrier and photon noises, the frequency of modulation signal, and the photon lifetime in the laser cavity.The quantum well （QW） semiconductor lasers have become main optical sources for optical fibre communication systems because of their higher modulation speed, broader modulation bandwidth and better temperature characteristics. In order to improve the quality of direct-modulation by means of the stochastic resonance （SR） mechanism in QW semiconductor lasers, we investigate the behaviour of the SR in dlrect-modulated QW semiconductor laser systems. Considering the cross-correlated carrier noise and photon noise, we calculate the power spectrum of the photon density and the signal-to-noise ratio （SNR） of the direct-modulated laser system by using the linear approximation method. The results indicate that the SR always appears in the dependence of the SNR on the bias current density, and is strongly affected by the cross-correlation coefficient of the carrier and photon noises, the frequency of modulation signal, and the photon lifetime in the laser cavity.

关 键 词：SINGLE-MODE LASER MODULATED NOISE RING LASER GAIN 

分 类 号：O413[理学—理论物理] TN248.4[理学—物理]