Magnetostrain and Magnetization of the Ni50Mn27.5Ga22.5 Single Crystal  

作　　者：王敬民 王雨菲 蒋成保 徐惠彬 

机构地区：[1]Department of Materials Science and Engineering, Beijing University of Aeronautics and Astronautics, Beijing 100083

出　　处：《Chinese Physics Letters》2006年第5期1293-1295,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 50271002, and the New Century Programme for Excellent Talents of the Ministry of Education of China under Grant No 04-0165.

摘　　要：Giant magnetic field induced strain （MFIS） up to 6.2% is achieved in the Ni50Mn27.5Ga22.5 single crystals with 5 M martensitic structure at room temperature. The switching magnetic field was about 2.4 kOe for the magnetostrain. A ‘magnetization jump＇ effect in the switching field applied along the initially hard direction confirms the occurrence of the large magnetostrain. The temperature dependence of the magnetostrain is investigated in lower temperature range. A linear decrease of the magnetostrain is observed with increasing temperature, but a strong decrease is monitored near the reverse martensitic transformation temperature.Giant magnetic field induced strain （MFIS） up to 6.2% is achieved in the Ni50Mn27.5Ga22.5 single crystals with 5 M martensitic structure at room temperature. The switching magnetic field was about 2.4 kOe for the magnetostrain. A ‘magnetization jump＇ effect in the switching field applied along the initially hard direction confirms the occurrence of the large magnetostrain. The temperature dependence of the magnetostrain is investigated in lower temperature range. A linear decrease of the magnetostrain is observed with increasing temperature, but a strong decrease is monitored near the reverse martensitic transformation temperature.

关 键 词：NI-MN-GA FIELD-INDUCED STRAIN TEMPERATURE-DEPENDENCE NIMNGA ALLOY REORIENTATION MOTION 

分 类 号：TG111[金属学及工艺—物理冶金]