Electroluminescence Afterglow from Indium Tin Oxide/Si-Rich SiO2/p-Si Structure  

作　　者：王晓欣 张建国 成步文 余金中 王启明 

机构地区：[1]State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

出　　处：《Chinese Physics Letters》2006年第5期1306-1309,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 60336010.

摘　　要：Indium tin oxide/Si-rich SiO2/p-Si structured devices are fabricated to study the electroluminescence （EL） of the Si-rich SiO2 （SRO） material. The obvious peaks at～1050nm and ～1260nm in the EL are ascribed to localized state transitions of amorphous Si （a-Si） clusters. The EL afterglow associated with a-Si clusters is observed from this structure at room temperature, while the afterglow is absent in the case of optical pumping. It is believed that carrier-induced defects act as trap centres in the a-Si clusters, resulting in the EL afterglow. The phenomenon of the EL afterglow indicates the limits of EL performance and electrical modulation of the SRO material with a larger fraction of a-Si clusters.Indium tin oxide/Si-rich SiO2/p-Si structured devices are fabricated to study the electroluminescence （EL） of the Si-rich SiO2 （SRO） material. The obvious peaks at～1050nm and ～1260nm in the EL are ascribed to localized state transitions of amorphous Si （a-Si） clusters. The EL afterglow associated with a-Si clusters is observed from this structure at room temperature, while the afterglow is absent in the case of optical pumping. It is believed that carrier-induced defects act as trap centres in the a-Si clusters, resulting in the EL afterglow. The phenomenon of the EL afterglow indicates the limits of EL performance and electrical modulation of the SRO material with a larger fraction of a-Si clusters.

关 键 词：SILICON NANOCRYSTALS SI PHOTOLUMINESCENCE EVOLUTION 

分 类 号：O484[理学—固体物理]