一种结构新颖的CMOS带隙基准源  

Novel CMOS Bandgap Voltage Reference

作　　者：赵世欣[1] 袁国顺[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《电子器件》2006年第2期322-324,共3页Chinese Journal of Electron Devices

摘　　要：为了简化可变参考电压电路结构,并且降低该参考电压的温度系数,讨论了一种输出可调节的CMOS带隙基准电路。该电路在传统带隙基准电路的基础上增加了一个运算放大器。可以通过调整电阻值来分别调节电流与VBE和VT的比例关系,从而得到任意输出电压的带隙基准源。此外,为了使带隙基准电路能够正常工作,设计了启动电路。通过仔细设计版图和增加电路结构,提高了电路的性能。HSPICE模拟和测试结果表明,所设计的电路具有较高的电源抑制比和良好的温度特性。To simplify the structure and lower the temperature coefficient of changeable voltage reference circuit, the design of a CMOS bandage reference （BGR） with adjustable output is discussed. On the base of the conventional bandgap reference circuit, this circuit is added an operation amplifier. Then, the reference voltage is converted from the sum of two currents： one is proportional to VBE and then other is proportional to VT. Both of the two currents are adjustable along with the variation of resistor values. A start up circuit, which can ensure the bandgap reference circuit proper operation, is proposed. Layout techniques and some auxiliary components are used to optimize from HSPICE simulation show that the circuit has the performance of bandgap voltage reference. Results a high power supply rejection ratio （PSRR） and low temperature coefficient.

关 键 词：CMOS 带隙基准 输出可调 启动电路 

分 类 号：TN432[电子电信—微电子学与固体电子学]