一种集成式多参数硅微传感器  

Micro Silicon Multi-Function Integrated Sensor

作　　者：周建发[1,2] 赵玉龙[1,2] 苑国英[1,2] 蒋庄德[1,2] 

机构地区：[1]西安交通大学精密工程研究所,西安710049 [2]机械制造系统工程国家重点试验室,西安710049

出　　处：《传感技术学报》2006年第2期273-276,共4页Chinese Journal of Sensors and Actuators

基　　金：国家自然科学基金资助(50475085)

摘　　要：为了实现小体积多参数的测量,提出一种单片集成多功能传感器。该传感器包括压力、温度和湿度传感器。各部分分别基于半导体压阻效应、电阻迁移率变化、极板间电容变化为原理制作而成。该传感器采用n型(100)基底,利用体硅和面硅工艺加工而成。测量电阻通过离子注入B+形成扩散电阻。为减小各参数间的相互影响,压力传感器的测量电阻布置于[110]晶向,测温电阻沿[100]晶向布置。温度输出信号可以实现对传感器中压力输出时温度漂移的精确补偿。芯片大小为5mm×5mm。试验表明传感器具有良好的线性,小迟滞,较高的灵敏度。This paper presents a monolithically integrated multi-function sensor in low volume. The integrated sensor includes pressure, temperature and humidity sensor. They are based on the principle of silicon piezoresistive effect, mobility change, and variable capacitance respectively. The chip is started with n- type （100） silicon, and both bulk micromachining and surface micromachining are used to fabricate the device. The piezoresistors are obtained by Boron ion implantation. To diminish the effect among each other, the temperature resistor is located along [100] direction while pressure gauge resistors are along [110] direction. Temperature output can realize the precise compensation for the temperature offset of the pressure output of the sensor. The whole chip is 5 mm× 5 mm. The integrated sensor has good sensitivity, linearity and low hysteresis.

关 键 词：压力传感器 扩散 温度传感器 湿度传感器 集成传感器 

分 类 号：TP212.1[自动化与计算机技术—检测技术与自动化装置] TN405[自动化与计算机技术—控制科学与工程]