CTR的导电机理研究  

Conducting Mechanism of V-P-Fe CTR

作　　者：孙健[1] 甘朝钦[2] 刘英 吴宗汉[2] 

机构地区：[1]南京师范大学电气与自动化工程学院,南京210042 [2]东南大学物理系,南京210096 [3]江苏兴顺电子元件厂,江苏兴化225700

出　　处：《传感技术学报》2006年第2期454-456,共3页Chinese Journal of Sensors and Actuators

基　　金：江苏省高校自然科学研究项目经费资助(02KJD510011)

摘　　要：为了优化CTR(CriticalTemperatureResister)产品性能,从微观上分析CTR晶粒体相变临界特征和粒界的电势垒,得出CTR临界阻温特性是由晶粒体导电性能和粒界电势垒共同决定,即“晶粒体-粒界”模型。运用此模型对不同配料比样品的临界阻温特性进行分析,得出V_2O_5P_2O_5Fe_2O_3配料比是影响CTR性能的关键因素。In order to enhance the CTR（Critical Temperature Resister） product performance, from micrograph the critical characteristic of phase change of the CTR crystal grain body and the electricity potential barrier between grains were analysed. The CTR critical resistance temperature characteristic is decided together by the crystal grain body electric conductivity and the grain of electricity potential barrier. The model carries on the analysis using ＂the crystal grain body-grain＂ to the different ingredient compared to the sample critical resistance temperature characteristic, obtains V2O5：P2O5：Fe2O3 ingredient ratio is affects the CTR performance the key aspect.

关 键 词：临界特性 阻温特性 晶粒体 粒界 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]