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作 者:牛振江[1] 孙雅峰[1] 陈蝶[1] 李则林[1] 岑树琼[1]
机构地区:[1]浙江师范大学物理化学研究所浙江省固体表面反应化学重点实验室,金华321004
出 处:《无机化学学报》2006年第5期930-934,共5页Chinese Journal of Inorganic Chemistry
基 金:国家自然科学基金(No.20373063);浙江省自然科学基金(No.Y404028)资助项目
摘 要:Porous nickel films have been successfully electrodeposited using cathodic hydrogen bubbles as a template. The influence of deposition parameters including concentration, temperature and current density on the films morphologies has been systematically studied. SEM results showed that increase in current density resulted in the deposits with higher pore density and smaller pore size. Both the pore size and thickness of the pore walls increased with the electrolyte temperature range from 20 to 60 ℃ when the other deposition parameters were fixed. Increasing the concentration of NiCl2 or NH4Cl in the electrolyte led to the thicker of the pore walls and declined pore size and density. The deposits displayed a dendritic morphology in cross-sectional SEM image. Electrochemical characterization of the porous nickel films after surface oxidation in 1.0 mol·L-1 NaOH solution showed that specific capacitance as high as 7.2 F·g-1 could be reached.Porous nickel films have been successfully electrodeposited using cathodic hydrogen bubbles as a template. The influence of deposition parameters including concentration, temperature and current density on the films morphologies has been systematically studied. SEM results showed that increase in current density resulted in the deposits with higher pore density and smaller pore size. Both the pore size and thickness of the pore walls increased with the electrolyte temperature range from 20 to 60 ℃ when the other deposition parameters were fixed. Increasing the concentration of NiCl2 or NH4Cl in the electrolyte led to the thicker of the pore walls and declined pore size and density. The deposits displayed a dendritic morphology in cross-sectional SEM image. Electrochemical characterization of the porous nickel films after surface oxidation in 1.0 mol·L^-1 NaOH solution showed that specific capacitance as high as 7.2 F· g^-1 could be reached.
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