Thickness Dependent Behavior of Photoluminescence of Tris(8-hydroxyquinoline)Aluminum Film  

作　　者：徐以锋[1] 张寒洁[1] 陈桥[2] 李海洋[1] 鲍世宁[1] 何丕模[1] 

机构地区：[1]浙江大学物理系,杭州310027 [2]伦敦大学化学系

出　　处：《Chinese Journal of Chemical Physics》2006年第2期152-154,共3页化学物理学报（英文）

基　　金：This work is supported by the National Natural Science Foundation of China （No. 10274072, 20240430654）;the Specialized Research Fund for the Doctoral Program of Higher Education of China （No. 20030335017）.

摘　　要：In situ thickness dependent photoluminescence （PL） measurements of tris（8-hydroxyquinoline） aluminum（Alq3） film were performed. At the beginning of Alq3 deposition on the glass substrate, the Alq3 emission showed a sharp red-shift. Further deposition of Alq3 resulted slight red-shift, and finally tended to saturated value. The total red-shift of about 12 nm was observed for the Alq3 film thickness range from 2 to 500 nm.This red-shift was attributed to the change from the 2D to 3D exciton state with increasing Alq3 film thickness. Meanwhile, the PL intensity of Alq3 emission increased continuously, and showed a rate change at the initial deposition of Alq3 due to non-rediative decay of excitons arised from the interaction between excitons and the substrate, and finally tended to saturation with the Alq3 thickness.

关 键 词：Tris（8-hydroxyquinoline） aluminum film PHOTOLUMINESCENCE RED-SHIFT 

分 类 号：O484.5[理学—固体物理] TN304.12[理学—物理]