射频磁控溅射ZnO多晶薄膜的制备及其荧光光谱  

Fluorescence Spectra of ZnO Polycrystalline Films Grown by RF Magnetron Sputtering

作　　者：孙汪典[1] 任思雨[1] 刘彭义[1] 

机构地区：[1]暨南大学物理学系,广州510632

出　　处：《真空科学与技术学报》2006年第2期127-129,共3页Chinese Journal of Vacuum Science and Technology

基　　金：广东省自然科学基金项目(No.031921)

摘　　要：用射频磁控溅射方法在未进行人为加热的石英玻璃衬底上,生长了良好c轴择优取向的ZnO多晶薄膜。研究了该ZnO薄膜的晶粒大小与其荧光光谱的关系,发现369 nm的本征峰和406 nm的缺陷峰随着薄膜晶粒的增大晶界应力的增加而出现红移,但469 nm的缺陷峰峰位却基本保持不变,并对各峰的形成和强度大小的变化规律作出了相应的解释。ZnO polycrystalline films, with a preferred orientation in c-axis, were grown by RF magnetron sputtering at room temperature on quartz substmte. Influence of grain size on the fluorescence spectra was studied. As the grain size grows and the grain boundary stress increases, the 369 nm intrinsic peak and the 406 nm defect peak display a red-shift, whereas the 469 nm defect peak remains unchanged. The formarion mechanisms of the thee peaks and their intensity were tentatively discussed. The red-shift possibly results from narrowing of the bandgap.

关 键 词：ZnO多晶薄膜 射频磁控溅射 晶粒 荧光光谱 红移 

分 类 号：O484.4[理学—固体物理]