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作 者:慕利娟[1] 朴云龙[2] 张晓平[2] 赵永刚[2] 魏斌[2] 曹必松[2] 江少林[1]
机构地区:[1]北京工业大学应用数理学院 [2]清华大学物理系,北京100084
出 处:《低温物理学报》2006年第2期134-137,共4页Low Temperature Physical Letters
基 金:国家自然科学基金(项目编号:60471001)资助的课题.~~
摘 要:本文研究了高温超导薄膜表面经氩离子不同程度刻蚀后其物理性能的变化,并采用离子刻蚀的方法设计制备了一个四节超导滤波器.YBa2Cu3O7-x(YBCO)薄膜表面经氩离子适当厚度刻蚀后的测试结果表明,薄膜的零电阻超导临界温度Tc随刻蚀时间适当的增加而提高,但过度刻蚀会带来电阻率的增大及转变宽度加宽.经SEM观测,刻蚀后薄膜表面的颗粒减少,趋于平整,通过XRD分析,离子刻蚀使薄膜晶格常数c发生了变化,同时测得超导薄膜的临界电流密度Jc基本保持不变.这一工作表明氩离子刻蚀对薄膜的氧含量及氧分布有一定的调控作用,并能提高薄膜的平整度,而且用此工艺制备出的超导滤波器显示出良好的微波特性,各项指标均达到了设计要求.这些研究对高温超导薄膜在微波电路中的应用提供了有利的帮助.The physic properties of HTS film by Ar ion etching step for different thickness in the surface was studied in this paper. Four probe measurement results indicated that after the Ar ion etching step, the Tc of YBa2Cu3O7-x (YBCO)film increased, the resistivity was small reduced when etching thickness less than 30nm, but the resistivity increased and the width of the transportation became broad if in over etching step. SEM shows the particles number and size were reduced and tend to flat when increasing etching time. X-ray Diffraction shows the shift of the characteristic (003) peaks and implies that the Ar ion etching can adjust to the oxygen distribution. The current density Jc kept in the same level and almost didn't change after Ar ion etching step. A 4-pole HTS filter was fabricated by using such Ar ion etching film and the microwave properties is close to the simulating results. These results are useful for the application of the HTS film in microwave circuits.
分 类 号:TM262[一般工业技术—材料科学与工程]
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