Al_2O_3衬底上生长的40.2K转变温度的MgB_2厚膜  

40.2 K CRITICAL TEMPERATURE OF MgB_ 2 THICK FILM DEPOSITED ON SUBSTRATE OF SAPPHIRE

作　　者：张开成[1] 丁莉莉[1] 庄承钢[1] 陈莉萍[1] 陈晋平[1] 冯庆荣[1] 

机构地区：[1]北京大学物理学院人工微结构与介观物理国家重点实验室,北京100871

出　　处：《低温物理学报》2006年第2期197-200,共4页Low Temperature Physical Letters

基　　金：北京大学理学院和国家重点基金(项目编号:BKBRSFG1999064602)资助的课题.~~

摘　　要：我们采用混合物理化学气象沉积方法(简称HPCVD)方法在(0001)晶向的Al2O3衬底上成功的沉积了1.3微米厚的MgB2超导厚膜.电性测量表明这种厚膜具有40.2K的超导转变温度,转变宽度为0.15K,绝对零度时Hc2(0)为13.7T,同时剩余电阻率达到RRR=11.磁性测量表明这种厚膜在5K和零场的条件下具有5×106A/cm3的高临界电流密度.We have successfully deposited good quality of MgB2 thick films in sapphire substrates. Critical temperature of the film is 40.2 K and it has a sharp transition width of 0.15 K, also lower upper critical field Hc2（O） ？ of 13.7 T. The film has the thickness about 1.3 μm and interwoven surface. Magnetic measurement of the film demonstrates it has great critical supercurrent of 5MA/cm^2 in 5 K. Although high To MgB2 films ranging from hundreds of angstroms to thousands of angstroms have been fabricated by X. X. Xi et al, the quality and measurement of MgB2 thick film is still unknown. Moreover we ftted the resistivity ＆ temperature and magnetic resistivity curves of the film by power law and compare its parameters with those of other groups.

关 键 词：MgB2超导厚膜 R-T曲线 SEM图 M-T曲线 

分 类 号：TM262[一般工业技术—材料科学与工程]