PTCDA/ITO表面和界面的X射线光电子能谱分析  

Surface and Interface Analysis of PTCDA/ITO Using X-Ray Photoelectron Spectroscopy(XPS)

作　　者：欧谷平[1] 宋珍[2] 桂文明[1] 张福甲[1] 

机构地区：[1]兰州大学物理科学与技术学院 [2]北京机械工业学院基础部,北京100085

出　　处：《光谱学与光谱分析》2006年第4期753-756,共4页Spectroscopy and Spectral Analysis

基　　金：国家自然科学基金(60276026);甘肃省自然科学基金(ZS031-A25-012-G)资助项目

摘　　要：利用X射线光电子能谱对PTCDA/p-Si有机/无机光电探测器中PTCDA/ITO表面和界面进行了测试分析。结果表明,环上的C原子的结合能为284.6 eV,酸酐中的C原子的结合能为288.7 eV,并存在来源于ITO膜中的氧对C原子的氧化现象,界面处C(1s)谱中较高结合能峰消失,且峰值向低结合能发生化学位移;C O键中O原子的结合能为531.5 eV,C—O—C键中的O原子的结合能为533.4 eV。Xray photoelectron spectroscopy （XPS） of surface and interface of PTCDA/ITO in PTCDA/p-Si organic-onqnorganic photoelectric detector was investigated. From Cls fine spectrum we found that the binding energy of C atoms in perylene rings was 284.6 eV; and the binding energy of C atoms in acid radical was 288.7 eV; moreover, some C atoms were oxidized by O atoms from ITO. The binding energy of O atoms in C=O bonds and C-O-C bonds was 531.5 and 533.4 eV, respectively. At the interface, the peak of high binding energy in C1s spectrum disappeared, and the main peak shifted toward lower binding energy.

关 键 词：表面及界面 X光电子能谱(XPS) PTCDA/ITO 

分 类 号：TN304[电子电信—物理电子学] O621.1[理学—有机化学]