ZnO纳米网状结构的制备  

Preparation of ZnO Nanostructure Network

作　　者：孙伟[1] 于威[1] 路万兵[1] 蔡淑珍[1] 张立[1] 吕雪芹[1] 许贺菊[1] 

机构地区：[1]河北大学物理科学与技术学院,河北保定071002

出　　处：《河北大学学报（自然科学版）》2006年第3期258-261,共4页Journal of Hebei University(Natural Science Edition)

摘　　要：采用热蒸发技术在镀金Si衬底上实现了ZnO纳米网状结构制备.利用扫描电子显微镜、X射线衍射及光致发光技术对ZnO纳米结构的形貌、晶态结构及发光特性进行了分析.结果表明,源材料ZnO和C的质量比为6∶1时有利于ZnO纳米网状结构的形成,该结构由一维纳米线和二维纳米片状结构组成.纳米网状结构主要由晶态ZnO组成.室温的光致发光谱分析结果显示,所制备的纳米ZnO网状结构呈现出了较强的紫外光发射的特征.ZnO nanostructure networks have been grown on Au-coat silicon substrate by thermally evaporating technology. The morphology,structure and optical property of the sample were characterized using scanning electon microscopy （SEM） , X-ray diffraction and photoluminescence. It＇s shown that the 6：1 of the material ratio of ZnO to C the source is benifical to the formation of ZnO nanostructure networks. The nanostructure are mostly in crystalline phase and composed of 1D nanowires and 2D nanowalls. Room-temperrature photoluminescence（PL） measurement show that the ZnO nanostructure networks reveal strong ultraviolet（UV） emission.

关 键 词：ZnO纳米网状结构 X射线衍射(XRD) 光致发光(PL) 

分 类 号：O733.9[理学—晶体学]