恒流应力下E^2PROM隧道氧化层的退化特性研究  

Degradation of tunnel oxide in E^2PROM under constant current stress

作　　者：李蕾蕾[1] 刘红侠[1] 于宗光[1] 郝跃[1] 

机构地区：[1]西安电子科技大学微电子学院

出　　处：《物理学报》2006年第5期2459-2463,共5页Acta Physica Sinica

基　　金：国家高技术研究发展计划(批准号:2004AA1Z1070);国家自然科学基金(批准号:60376024)资助的课题~~

摘　　要：在电容测量的基础上研究了薄隧道氧化层在恒定Fowler-Nordheim(F-N)隧穿电流下的退化情况.这种退化是恒流应力和时间的函数,对恒流应力大小的依赖性更加强烈,隧道氧化层在F-N电流下的退化是注入电荷密度(Qinj)的函数.在较低Qinj下氧化层中发生正电荷俘获,在较高Qinj下发生负电荷俘获,导致栅压变化的反复.The degradation of thin tunnel gate oxide under constant Fowler-Nordheim current stress was studied using capacitors. The degradation is a function of constant current and time, which depends more on the magnitude of constant current. Thus the degradation is a strong function of injected charge density Qinj . Positive charge trapping is usually dominant at lower Qinj followed by negative charge trapping at higher Qinj, causing a reversal of gate voltage change.

关 键 词：E^2 PROM 隧道氧化层 退化 恒流应力 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]