一种新型双多晶自对准结构的高压功率SiGe HBT  

A Novel Double-poly Self-aligned High-voltage Power SiGe HBT

作　　者：徐阳[1] 张伟[1] 岳磊[1] 许军[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《微电子学与计算机》2006年第5期93-96,共4页Microelectronics & Computer

摘　　要：为了改善高压功率SiGeHBT的综合性能,应用图形外延SiGe工艺,研制出了一种新型的双多晶自对准SiGeHBT器件。相对于双台面结构的SiGeHBT而言,该结构的SiGeHBT在发射极总周长不变的情况下,其发射结面积减少超过50%,集电结面积减少近70%,BVCBO也提高了近28%。经测试,器件的结漏电和直流增益等参数均符合设计要求。To improve the performance of SiGe HBT, a new type of double-poly self-aligned SiGe HBT was fabricated by using the patterned SiGe epitaxial growth technology. Compared with the double mesa SiGe HBT, this new device structure reduces the emitter junction area by more than 50%, and reduces the collector junction area by about 70%, meanwhile it increases the BVCBO by 28%. The measurement results show that the characteristics of the device are acceptable.

关 键 词：SIGE HBT 图形外延 自对准 高压 

分 类 号：TN4[电子电信—微电子学与固体电子学]