钛宝石激光泵浦Nd:GdVO_4微片激光器  

Ti:sapphire Laser Pumped Nd:GdVO_4 Microchip Lasers

作　　者：王营[1] 王正平[1] 张怀金[1] 胡大伟[1] 徐方华[1] 孙洵[1] 许心光[1] 邵宗书[1] 

机构地区：[1]山东大学晶体材料国家重点实验室,山东济南250100

出　　处：《光电子．激光》2006年第5期546-548,共3页Journal of Optoelectronics·Laser

基　　金：教育部优秀青年教师基金资助项目;教育部留学回国人员科研启动基金资助项目(2004.527);山东省自然科学基金资助项目(Y2004F01)

摘　　要：以Ar3+泵浦的钛宝石激光器作为泵浦源,研究了Nd:GdVO4晶体微片的激光性能。晶片厚度为1 mm,一端镀1.06μm高反膜与808 nm增透膜,另一端镀1.06μm部分反射膜(T=1%),构成平-平谐振腔。该激光器的阈值泵浦功率低至18 mW,斜效率达到50.7%,光-光转换效率为47.9%。测试了Nd:GdVO4晶体微片的吸收系数和荧光寿命,分别为32.7 cm-1(π向)和120μs。With a Ti：sapphire laser as the pump source, the efficient laser output of a Nd：GdVO4 microchip was reported. The length of the crystal was 1 mm. Its one end face was high-reflective coated at 1.06 μm and anti-reflective coated at 808 nm, and the other end face was partial-reflective coated at 1.06 μm （T = 1 %）, which form a flat-flat resonator. The pump threshold was only 18 mW, the slope efficiency was 50.7%, and the optical conversion efficiency was 47.9%. The absorption coefficient and the fluorescence lifetime of Nd：GdVO4 microchip were measured, which were 32.7 cm^-1 and 120 μs, respectively.

关 键 词：钛宝石激光泵浦 ND:GDVO4晶体 微片激光器 

分 类 号：TN248.1[电子电信—物理电子学]