Ce：Lu_2SiO_5闪烁晶体生长  

Growth of Ce￣(3 +): Lu_2SiO_5 Scintillation Crystals

作　　者：吴光照[1] 张新民[1] 朱汝德[1] 张秀荣[1] 

机构地区：[1]中国科学院上海光学精密机械研究所

出　　处：《人工晶体学报》1996年第2期175-176,共2页Journal of Synthetic Crystals

摘　　要：用Φ８０×６０ｍｍ的铱坩埚，铱丝为籽晶，提拉法生长了Ｃｅ（０．５ａｔ．％）：Ｌｕ２ＳｉＯ５单晶。Ｌｕ２Ｏ３原料纯度为９９．５％；得到小晶体的尺寸３×４×４ｍｍ；测量了晶体的光学激发谱和发光谱；讨论了生长大晶体的措施。The Ce doped Lu2SiO5 scintillating crystals are grown by Czochralski method. A Ir-wire is used to seed the crystal, the purity of the start material-Lu2SiO5 is 99 .5 %. The Ce: Lu2SiO5 small crystals in dimension 3 × 4 × 4mm are obtained. The luminescence and excitationspectra are measured. It is discussed how to grow a larger crystal.

关 键 词：闪烁晶体 引上法晶体生长 激发光谱 晶体 

分 类 号：O782.9[理学—晶体学]