Anomalous Behaviour of Photorefractive Grating Erasure Owing to Existence of both Negative and Positive Carriers  

Anomalous Behaviour of Photorefractive Grating Erasure Owing to Existence of both Negative and Positive Carriers

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作  者:朱荣 刘德安 郭袁俊 柴志方 刘立人 

机构地区:[1]Information Optics Laboratory, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800

出  处:《Chinese Physics Letters》2006年第6期1462-1465,共4页中国物理快报(英文版)

基  金:Supported by the Important Pre-research Project of the Ministry of Science and Technology of China under Grant No 2002CCA03500, and the National Natural Science Foundation of China under Grant No 60177016.

摘  要:In LiNbO3:Fe, anomalous behaviour of grating erasure is observed with different wavelengths, i.e. rapid grating erasure in the short wavelength range, which deviates from the results predicted by the electron transport band model. The deviation is related to the coexistence of electrons and holes in photorefraction, and charge-transfer process including electrons and hole has been proposed. The electron and hole contributions to photoconductivity have been identified by experiments. We also give the theoretical dependence of electron photo-excitation coefficient S of the Fe centre on the wavelength.In LiNbO3:Fe, anomalous behaviour of grating erasure is observed with different wavelengths, i.e. rapid grating erasure in the short wavelength range, which deviates from the results predicted by the electron transport band model. The deviation is related to the coexistence of electrons and holes in photorefraction, and charge-transfer process including electrons and hole has been proposed. The electron and hole contributions to photoconductivity have been identified by experiments. We also give the theoretical dependence of electron photo-excitation coefficient S of the Fe centre on the wavelength.

关 键 词:INDUCED CHARGE-TRANSPORT HOLOGRAPHIC STORAGE CRYSTALS INTENSITIES ULTRAVIOLET LINBO3 

分 类 号:O436[机械工程—光学工程]

 

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