Influence of Polarization-Induced Electric Field on Subband Structure in AlxGa1-xN/GaN Double Quantum Wells  

作　　者：雷双英 沈波 张国义 

机构地区：[1]School of Physics and State Key Laboratory for Mesoscopic Physics, Research Centre for Wide Gap Semiconductor, Peking University, Beijing 100871

出　　处：《Chinese Physics Letters》2006年第6期1574-1577,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 60325413 and 60444007, the Cultivation Fund of the Key Scientific and Technical Innovation Project of the Ministry of Education of China under Grant No 705002,and the Beijing Natural Science Foundation of China under Grant No 4062017.

摘　　要：The influence of the polarization-induced electric field and other parameters on the subband structure in AlxGa1-x N /GaN coupled double quantum wells （DQWs） has been studied by solving the Schrodinger and Poisson equations self-consistently. It is found that the polarization effect leads to an asymmetric potential profile of AlxGa1-xN/GaN DQ, Ws although the two wells have the same width and depth. The polarization effect also leads to a very large Stark shift between the odd and the even order subband levels that can reach 0.54eV. Due to the polarization-induced Stark shift, the wavelength of the intersubband transition between the first odd order and the second even order subband levels becomes smaller, which is useful for realization of optoelectronic devices operating within the telecommunication window region.

关 键 词：偏振感应电场 次带结构 AlxGa1-xN/GaN双量子阱 量子论 

分 类 号：O413[理学—理论物理]