PZT多层薄膜物性的研究  

THE PROPERTIES OF MULTI-LAYERED PZT FILMS

作　　者：陶向明[1] 谭明秋[1] 许宇庆[1] 张其瑞[1] 

机构地区：[1]浙江大学物理系

出　　处：《真空科学与技术》1996年第2期108-116,共9页Vacuum Science and Technology

基　　金：国家自然科学基金!69201006;浙江省自然科学基金!192056

摘　　要：对磁控溅射PZT铁电多层薄膜进行了分析，结果表明：通过对多层薄膜合理的设计和厚度控制，可以改善薄膜的性能，为进一步的器件应用提供了可能性。通过研究发现。制备多层膜较理想的溅射条件是衬底温度Ts＝650℃，薄膜子层厚度约为300um，衬底则以MgO（100）单晶、SiO2（100）单晶为佳。结构分析的结果显示出：PZT多层铁电膜中的晶粒排列整齐，颗粒大小均匀，基本上和衬底成定向织构，膜的电畴呈180°。通过比较可以发现，子层厚度及总厚度超薄，膜的介电常数越大，弛豫频率也越高。但薄膜总厚度对多层膜的绝缘性能影响不大，这说明薄膜的绝缘性质主要是由金属－铁电薄膜的界面决定的。在不同的电压下，多层膜的传导性能影响肖特基势垒的穿透和Fowler－Nordheim隧穿。The properties of multi-layered PZT ferroelectric films deposited by RF magnetron sputtering have been investigated. The properties of films can be improved if we select suitable conditions and thickness, It is found that the optimal processing conditions are:the substrate temperature Ts= 650℃,the thickness of films is about 300 nm, and MgO (100) crystal, SiO2 (100) crystal are more suitable for muhi-layered PZT fllms. The crystal is partially oriented growth,and the domain is 180° type. Moreover,it was found that the thinner the film,the larger the dielectric constant and the relaxation frequency. However,the insulation of the multi-layered film is not affected by the film's thickness,so we can conclude that the insulation of the films is dominated by the interface between metal and PZT thin film. We have measured the I-U curves of the multilaycred PZT ferroelectric films and fuund that Shottky barrier and Fowler-Nordheim tunneling dominate the conduction mechanism,respectively.

关 键 词：铁电 多层薄膜 锆钛酸铅 薄膜 

分 类 号：TM27[一般工业技术—材料科学与工程] O484.4[电气工程—电工理论与新技术]