Ti/Al_2O_3界面反应的俄歇电子能谱研究  

A STUDY OF Ti/Al_2O_3 INTERFACE REACTION BY AUGER ELECTRON ENERGY SPECTROSCOPY

作　　者：王佑祥[1,2] 顾诠[1,2] 崔玉德[1,2] 陈新 

机构地区：[1]中国科学院半导体研究所,北京100083 [2]中国科学院表面物理国家重点实验室,北京100080

出　　处：《真空科学与技术》1996年第5期323-328,共6页Vacuum Science and Technology

基　　金：国家自然科学基金

摘　　要：用俄歇电子能谱详细研究了Ti／Al2O3的界面反应。通过观察Ti的L23M23M45，L23M23M23及Al的LVV俄歇发射强度、峰形及位置随深度变化，研究Ti－O，Al－O，Ti－Al等价键结合状态，同时考虑Al不同化合态俄歇峰的化学位移。选取特征峰，进行Auger深度分析。实验表明室温下Ti／Al2O3的界面已发生反应，Al—O键被还原，元素Al在界面析出。仅在600℃以上退火样品中存在Ti—A1价键结合状态。原子浓度分布曲线显示界面反应区域随退火温度增加而变宽变高。850℃时曲线上已形成平台。平台区的成分（原子百分浓度）为53％Ti，32％Al，约12％O。界面反应产物由Ti3Al，Al与固溶O组成，同时XRD分析在850℃样品上观察到了Ti3Al相的衍射线。In this paper the changes of Auger peaks of Ti L23M23M45,L23M23M23 and Al LVV withdepth as well as Auger depth profiling have been used to investigate the interface reaction of Ti/Al2O3, Experimental results show that at room temperature(RM),Al2O3 has been reduced by Ti and elemental Alsegregates at the interface. Ti-Al bonds exist only in the samples annealed above 600℃. The atom concentration curves have shown that the reacted region at the interface become broader and highet with the increase of annealing temperature and form a plateau in the profile of 850℃. The composition correspondingto the plateau is that: 53%Ti, 32%Al, ~ 12%O. The interface reaction products consist of Ti2Al, Al andthe dissociated O,while the Ti3Al diffraction lines have been observed by X-ray diffraction.

关 键 词：界面反应 俄歇电子能谱 氧化铝 陶瓷 

分 类 号：TQ174.758[化学工程—陶瓷工业] TQ174.1[化学工程—硅酸盐工业]