Preparation of CeO_2 Buffer Layer on Cube Textured Nickel Substrate by Reactive Sputtering  

作　　者：Zhang Hua Yang Jian Gu Hongwei Liu Huizhou Qu Fei 

机构地区：[1]Superconducting Materials Research Center, General Research Institute for Non-Ferrous Metals, Beijing 100088, China

出　　处：《Journal of Rare Earths》2006年第2期205-205,共1页稀土学报（英文版）

摘　　要：The buffer layer CeO2 films were grown on cube textured metallic Ni substrates by using reactive magnetrun sputtering. Ar/H2 mixed atmosphere, which effectively inhibited the formation of NiO, was used as pre-depositing gas before CeO2 films were grown in Ar and 02. At 700 ℃ under the total pressure of 26 Pa,the pure c-axis orientation tilm was obtained. X-ray θ-2θscan, pole figure and φ-scan were used to observe the microstructure of the buffer layer. The resuits show that CeO2 film has strong cube texture and the FWHM is 9°. In addition, the CeO2 film is dense and crack-free.The buffer layer CeO2 films were grown on cube textured metallic Ni substrates by using reactive magnetrun sputtering. Ar/H2 mixed atmosphere, which effectively inhibited the formation of NiO, was used as pre-depositing gas before CeO2 films were grown in Ar and 02. At 700 ℃ under the total pressure of 26 Pa,the pure c-axis orientation tilm was obtained. X-ray θ-2θscan, pole figure and φ-scan were used to observe the microstructure of the buffer layer. The resuits show that CeO2 film has strong cube texture and the FWHM is 9°. In addition, the CeO2 film is dense and crack-free.

关 键 词：CeO2 buffer layer reactive sputtering cube texture Ni substrate rare earths 

分 类 号：O614.33[理学—无机化学]