外腔中半导体二极管激光阵列的高阶侧模锁定  

Phase locking high-order lateral modes of laser diode array with an external cavity

作　　者：钱凌轩[1] 施鹏程[1] 陈建国[1] 严地勇[2] 杨华[1] 陈海波[1] 

机构地区：[1]四川大学电子信息学院,成都610064 [2]中国工程物理研究院应用电子研究所,四川绵阳621900

出　　处：《强激光与粒子束》2006年第4期539-541,共3页High Power Laser and Particle Beams

基　　金：国家自然科学基金委-中国工程物理研究院联合基金资助课题(10276026)

摘　　要：理论分析了外腔较短情况下,宽条半导体二极管激光阵列(LDA)高阶侧模相位锁定的可能性,观察了包含主、旁瓣结构的多侧模远场光强分布。从实验记录结果可以看出,在旁瓣中出现了标志锁相的峰、谷结构,而且该结构的调制度明显高于主瓣中的峰、谷结构的调制度,结果表明:在外腔较短情况下,LDA高阶侧模相位锁定的现象是存在的。The possibility of phase locking high-order lateral modes of broad-stripe laser diode array （LDA） with a short external cavity is analyzed theoretically. The far field pattern of multi-lateral modes, which comprises a main lobe and side lobes, is observed for a LDA positioned in a short external cavity. From the experimental records, structures composed of peaks and valleys, symbolizing phase locking, can be observed within the side lobes. Moreover. the modulation depth of this structure is considerably larger than that in the main lobe. From these results, it can be concluded that the phase-locking between high-order lateral modes of emitters of the LDA is realized when the external cavity is short enough.

关 键 词：半导体二极管激光阵列 高阶侧模 外腔 相位锁定 

分 类 号：TN248.4[电子电信—物理电子学]