激光能量对掺铒纳米Si晶薄膜形貌的影响  

Influence of laser energy on morphology of nanocrystalline silicon films prepared by laser ablation

作　　者：何雷[1] 王文军[2] 周阳[1] 邓泽超[1] 

机构地区：[1]河北大学物理科学与技术学院,河北保定071002 [2]保定师范专科学校物理系,河北保定071000

出　　处：《华北电力大学学报（自然科学版）》2006年第3期110-112,共3页Journal of North China Electric Power University：Natural Science Edition

基　　金：河北省自然科学基金资助项目(E2005000129.)

摘　　要：采用XeCl脉冲准分子激光器,保持激光脉冲比为1:2,分时烧蚀Er靶和高阻抗单晶Si靶。改变激光能量,在真空中沉积了掺Er非晶Si薄膜。在氮气保护下,分别在950℃,1010℃和1100℃温度下进行30min热退火处理,得到掺Er纳米晶Si薄膜。扫描电子显微镜的结果表明,高的退火温度或高的激光能量均会导致迷津结构的形成。In the experimental situation, the Er and Si targets are ablated alternately with the pulse-number-ratio of 1： 2 by a XeCl excimer laser. The Er-doped amorphous Si films are prepared in vacuum by different laser energy. The as-formed films, being annealed for 30 minutes at the constant temperature of 950℃, 1010℃ or 1100℃ in N2 gas, are converted into Et-doped nanocrystalline Si films. The scanning images of electron microscopy show that high annealing temperature or high laser energy can induce the nanocrystalline Si film with mazes.

关 键 词：掺Er纳米Si晶粒 脉冲激光烧蚀沉积 形貌 

分 类 号：O78[理学—晶体学]