Tm∶YAP激光晶体的生长  

The Czochralski Growth of Tm∶YAP Laser Crystal

作　　者：陆燕玲[1] 王俊[1] 杨扬[1] 董安平[1] 孙宝德[1] 

机构地区：[1]上海交通大学金属基复合材料国家重点实验室,上海200030

出　　处：《上海交通大学学报》2006年第5期864-868,共5页Journal of Shanghai Jiaotong University

摘　　要：采用提拉法生长了b轴Tm：YAP晶体，晶体尺寸为φ（20～25）mm×（60～70）mm．针对部分晶体中存在的开裂、散射颗粒等宏观缺陷，分析讨论了其成因并提出了改进措施．对晶体吸收光谱和荧光光谱的测定结果表明，晶体的吸收峰位于694和795nm，荧光谱峰值在2．01μm附近．The growth of Tm ： YAP single crystal by Czochralski method with MF induction heating was reported. The dimensions of these crystals are 525（20425） mm×（60-70） mm. Macroscopical defects such as crack, scattering center were observed in some of as-grown crystals. The cause and dealing means of defects were discussed. Absorption and fluorescence spectra of the crystals were studied at room temperature. The absorption spectrum shows the two peaks with wavelength of 694 nm and 795 nm, and the fluorescence peak is at 2.01 μm.

关 键 词：Tm:YAP晶体 提拉法晶体生长 缺陷分析 吸收光谱 荧光光谱 

分 类 号：O782[理学—晶体学]