提高扩散硅压力传感器扩散电阻一致性的有效方法  

A Method of Consistence Improvement for Diffused Resistors in Silicon Sensors

作　　者：季安[1] 郎海宁 孙慧卿 

机构地区：[1]沈阳仪器仪表工艺研究所,沈阳市110043

出　　处：《仪表技术与传感器》1996年第1期17-18,25,共3页Instrument Technique and Sensor

摘　　要：本文叙述了在通用扩散炉上实现大面积超厚硅片电气参数一致性的有效方法,在使用本工艺之前,芯片径向电阻的非均匀性在20％左右。使用本工艺后,非均匀性减小到10％以内,一般可以控制在6％左右。有效地解决了普通设备加工特殊硅片的技术问题。An effective measure for the improvement of consistence of electrical parameters of large and thick wafers processed in common diffusion furnaces is presented in this paper. With the new process, the non- uniformity of radical resistors can be less than 10%, generally about 6%, compared with a uniformity of 20% with conventional process. The problems occurred in processing special-sized wafers with common furnaces have been solved.

关 键 词：扩散电阻 硅压力传感器 传感器 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]