苯基单分子器件I-V特性的研究(英文)  

Tight-binding Method Calculation of I-V Characteristics ofSingle Benzene Molecular Device

作　　者：李娜[1] 蔡敏[1] 

机构地区：[1]华南理工大学物理科学与技术学院,广东广州510640

出　　处：《电子元件与材料》2006年第6期55-57,共3页Electronic Components And Materials

摘　　要：采用紧束缚近似的方法,研究了由单苯基分子构成的三端器件的I-V特性。所得结果近似表现出了MOS(Metal-Oxide-Semiconductor)器件的电学规律;同时模拟并讨论了该器件的I-V特性随温度变化的规律,发现:电流幅值随门电压的增大而增加,温度对电流幅值有重要影响。所得结论为分子器件和纳米器件的开发,提供了理论基础。The experiments and theory have demonstrated that a single molecule can form the core of a two-terminal device so far. The simulations of I-V characteristics of three-terminal device based on the single benzene molecule by tight-binding method have described, and the influence of temperature on the current is discussed. The result sheds new light on the I-V properties of molecular devices and shows that such calculations would be useful in molecular devices designing for future nanotechnology.

关 键 词：电子技术 紧束缚近似 模拟 分子器件 I-V特性 

分 类 号：TN303[电子电信—物理电子学]