有机磷光电致发光器件中的复合宽度和外量子效率  

Recombination Width and External Quantum Efficiency in Organic Electro-Phosphorescent Devices

作　　者：代国章[1] 李宏建[1,2] 戴小玉[1] 潘艳芝[1] 谢强[1] 彭景翠[1] 

机构地区：[1]湖南大学应用物理系 [2]中南大学物理科学与技术学院,长沙410083

出　　处：《Journal of Semiconductors》2006年第5期905-909,共5页半导体学报（英文版）

基　　金：*湖南省杰出青年科学基金(批准号:03JJY1008);中国博士后科学基金(批准号:2004035083)资助项目~~

摘　　要：从经验公式出发,基于T-T湮灭过程,建立了有机磷光电致发光器件中复合宽度和外量子效率的理论模型.结果表明:(1)随外加电压升高,器件的复合宽度减小,外量子效率增加;(2)随器件厚度的增加,复合宽度相应增加,但外量子效率在不同的电压下呈现不同的变化趋势;(3)外量子效率随复合电流密度的增大而显著降低.讨论了外加电压和器件厚度对复合宽度的影响,分析了外量子效率随外加电压、器件厚度及复合电流密度变化的原因.Based on the experience formula and the triplet（T）-triplet（T） annihilation processes,an analytical model to calculate the recombination width and the external quantum efficiency of doped organic electrophosphorescence （EPH） devices is presented. The influences of applied bias, current density, and device thickness on the width of the recombination zone and the external quantum efficiency are studied thoroughly. It is found that： （1） as the applied voltage increases,the recombination width of the device decreases and the external quantum efficiency increases; （2） with increasing the thickness of the device, the recombination width increases accordingly, and the external quantum efficiency behaves differently at different applied voltages; （3） the external quantum efficiency decreases significantly with increasing the recombination current density.

关 键 词：电致磷光 三重态 复合区域 外量子效率 

分 类 号：TN383.1[电子电信—物理电子学]