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作 者:袁强华[1] 殷桂琴[1] 戴康[1] 沈异凡[1]
出 处:《激光杂志》2006年第3期8-9,共2页Laser Journal
基 金:国家自然科学基金资助项日(10264004)
摘 要:研究了Cs(62P)多重态分别与N2、He的光学碰撞中的精细结构分支比,定义分支比为|(D1)/|(D2),|(D1)、|(D2)分别为Cs的D1和D2线的荧光强度。单模半导体激光器激发Cs原子到6P3/2态,通过与N2、He的激发转移、碰撞传能研究了62p原子的精细结构混合,得到了6P→6P的转移截面如下:Cs-He的转移截面为σ=2.25×10-19cm2,Cs-N的转移截面为σ=1.808×10-18cm2。并对结果进行了讨论。Ratios for branching into the free- structure levels of the Cs 6P multiplet, as a consequence of an optical collision with N2 and He atoms are excitported. The branching ratios are defined as I( D1 )/I( D2 ) , where I ( D1 ) and i( D2 ) are measured intensities of the atomic CsD1 and D2 lines. Cs atoms were excited to the 6P3/2 level by using a single - mode laser diode. Thefine- structure mixing in 62p atoms is studied through excitation transfer and collisional excitation transfer between Ca and N2, He. We obtained the value of Cs - He cross section to be σ21 = 2.25 × 10^-19cm^2, Cs - N2 cross section to be σ21 = 1. 808 × 10^-18cm^2. The results are discussed.
分 类 号:TN248.1[电子电信—物理电子学]
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