高度有序的多孔型铝阳极氧化膜的制备  

Preparation of Anodic Alumina Film with Well Ordered Porous

作　　者：杨培霞[1] 安茂忠[1] 郭洪飞[1] 

机构地区：[1]哈尔滨工业大学应用化学系,黑龙江哈尔滨150001

出　　处：《电镀与环保》2006年第3期28-30,共3页Electroplating & Pollution Control

基　　金：黑龙江省自然科学基金资助项目(E200401)

摘　　要：以硫酸为电解液研究了多孔阳极氧化铝膜的制备，并采用场发射扫描电子显微镜对多孔氧化铝膜的形貌进行表征。结果表明：氧化电压在24～26V时能够得到孔径为25～30nm的多孔氧化铝膜。在不同电压下进行阳极氧化时，多孔氧化铝形成过程均经历了阻挡层形成、多孔层萌生及多孔层稳定生长三个阶段，但多孔层萌生及稳定生长的电流密度随氧化电压的升高而增加。当氧化时间为6h时氧化膜厚度达到最大值38nm。对多孔氧化铝膜进行XPS分析表明，氧化铝膜的主要成分为非晶态Al2O3。The preparation of porous anodic alumina film is studied with sulfuric acid as electrolyte and the morphology of the film is characterized by field-emission scanning electron microscope （FE-SEM）. The experimental results show that a porous anodie alumina film with pore diameter of 25 - 30 nm can be prepared at 24 - 26 V. During anodization at different voltages, the formation process of porous anodie alumina film involves three stages： formation of barrier layer, germination and stable growth of porous layer. The current density for the germination and stable growth of porous anodic alumina film increases with the rising of anodizing voltage. The film thickness can reach the maximum value of 38μm in 6 hours of anodization. X-ray photoelectron spectroscopy （XPS） analysis indicates that the film is mainly composed of amorphous Al2O3.

关 键 词：多孔氧化铝 阳极氧化 纳米材料 

分 类 号：O646.542[理学—物理化学]