BaO对高温压敏电阻器漏电流的影响  

The Effect of BaO Doping on the Leakage Current of High-Temperature Varistors

作　　者：石康源[1] 石滨[1] 付刚[1] 陈志雄[1] 

机构地区：[1]广州师范学院物理系,华中理工大学固体电子学系

出　　处：《华中理工大学学报》1996年第1期95-97,共3页Journal of Huazhong University of Science and Technology

摘　　要：在ＺｎＯ高温压敏电阻原料中加入不同比例的ＢａＯ，研究其对高温压敏电阻漏电流和高温下长期工作的稳定性的影响．发现ＢａＯ含量较高时，不但可以降低ＺｎＯ压敏电阻常温下的漏电流，而且可以增加其在高温下长期工作的稳定性．BaO is doped in various proportions into high temperature ZnO varistors.The leakage current and long-time operating stability at high temperatures of the varistors is studied. It has been found that with a large content of BaO,the leakage current at room temperatures is decreased and the long-time operating stability at high temperature is improved.This is due to a formation of BaSb,O,at the grain boundary,and because of the inherent characteristics of BaSb2O6 phase itself the formation of oxygen vacancies is inhibited,the ion is stable,and the thickness,density and homogeneity of the grain boundary are increased so that an excellent barrier layer is formed.

关 键 词：压敏电阻器 高温 漏电流 稳定性 氧化钡 

分 类 号：TN37[电子电信—物理电子学]