流延法制备钛酸锶钡厚膜  

Fabrication of BST Thick Film by Tape Casting Method

作　　者：张五星[1] 薛丽红[2] 邹雪城[1] 曾祥斌[1] 尹盛[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074 [2]清华大学化学系,北京100084

出　　处：《压电与声光》2006年第3期314-316,共3页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目(60306011)

摘　　要：采用流延法在有凹槽的硅片上制备出钛酸锶钡((Ba,Sr)TiO3)厚膜材料。为了提高薄膜的致密性和降低烧结温度,采用溶胶沉淀法制备BST纳米粉末,并结合水热处理进一步提高其结晶性,降低颗粒中有机物的吸附量。所得BST厚膜烧结温度约为1 200℃。经1 000℃、5 h热处理后,BST厚膜厚约30μm,表面平整,且较致密。介温谱表明其相变温度约为30℃,介电损耗约为0.02,与薄膜材料相比,其介温变化率有较大的提高。BST thick films are fabricated in the grooved silicon substrate by tape casting method. Sol-precipitation method is used to obtain BST nano powders, and the crystallization of the precipitated BST powders is improved by hydrothermal treatment. The obtained BST thick film is sintered at 1 000℃ and 1 200℃ for 5 h respectively. The BST thick film sintered at 1200℃ have a grain size of 38μm with damaged bottom electrode, while the BST thick film sintered at 1 000℃ have smooth surface, dense structure with a grain size of 0.5 μm. The finally obtained BST thick film has a thickness of about 30μm, while the phase transition temperature is about 30℃ and the dialectric loss is about 0.02. The differential dielectric constant against temperature has been improved much more compared with that of BST thin films.

关 键 词：钛酸锶钡 粉末 厚膜 凹槽 流延 

分 类 号：TN304[电子电信—物理电子学]