BST溶胶及其纳米晶铁电薄膜特性研究  

Studies on Characteristics of BST Sols and Nanocrystalline Ferroelectric Thin Films

作　　者：余慧春[1] 惠春[1] 徐爱兰[1] 

机构地区：[1]上海交通大学微纳科学技术研究院微米/纳米加工技术国家重点实验室薄膜与微细技术教育部重点实验室,上海200030

出　　处：《压电与声光》2006年第3期321-324,共4页Piezoelectrics & Acoustooptics

基　　金：国防预研基金资助项目(DJ3.5.1)

摘　　要：考察了在溶胶-凝胶（Sol-Gel）工艺中化学添加剂对钛酸锶钡（BST）溶胶的粒度分布的影响。通过对化学添加剂的优选，制备出具有优异电性能的BST薄膜。X-射线衍射（XRD）表明在Pt／Cr／SiO2／Si衬底上制备的BST薄膜具有完整的钙钛矿结构，AFM表面形貌显示BST薄膜表面致密、平整、无裂纹，平均晶粒尺寸约50nm。漏电流测试表明BST薄膜在0～9V的外加偏压下始终保持着较低的漏电流，在外加偏压为8．8V时，漏电流密度为2．9×10^-6A／cm^2。The influence of chemical additives during a Sol-Gel processing on the size distribution of BST sols was studied. BST thin films with good electrical properties were prepared through the optimization of chemical additives. XRD pattern shows that BST thin films deposited on the Pt/Cr/SiO2/Si substrate possess a well crystallized perovs kite phase. AFM micrograph indicates that BST thin films are dense and smooth without any cracks and the average grain size of the thin films is approximately 50 nm. The leakage current density of BST thin films was found to be very low under applied voltage of 0-9 V and leakage current density is 2.9×10^-6 A/cm^2 under an applied voltage of 8.8V.

关 键 词：溶胶-凝胶(Sol-Gel)工艺 钛酸锶钡(BST)薄膜 粒度分布 漏电流 铁电体 

分 类 号：TM221[一般工业技术—材料科学与工程]