Properties of Excitons Bound to Neutral Donors in GaAs-AlxGa1-xAs Quantum-Well Wires  

作　　者：DI Bing LIU Jian-Jua 

机构地区：[1]College of Physics, Hebei Normal University, Shijiazhuang 050010, China

出　　处：《Communications in Theoretical Physics》2006年第5期945-949,共5页理论物理通讯（英文版）

基　　金：The project supported by National Natural Science Foundation of China under Grant No. 10574036, and the Natural Science Foundation of Hebei Province of China under Grant No. A2004000140

摘　　要：In the effective-mass approximation, using a simple two-parameter wave function and a one-dimensional （ID） equivalent potential model, we calculate variationally the binding energy of an exciton bound to a neutral donor （D^0, X） in finite GaAs-AIxGa1-xAs quantum well wires （QWWs）. At the wire width of 25 A, the binding energy has a peak value, which is also at the position of the peak of the exciton binding energy, and the center-of-mass wave functions of excitons reaches the most centralized distribution. In addition, the changing tendency of the average interparticle distance as the wire width is reverse to that of the binding energy.

关 键 词：quantum-well wires excitons bound to a neutral donor binding energy 

分 类 号：O413[理学—理论物理]