硫化温度对两步法制备FeS_2薄膜成分和结构的影响  

The effect of sulfidation temperature on the structure and composition of pyrite thin films prepared by two-step method

作　　者：吴新坤[1] 翁臻臻[1] 郑明学[1] 钟南保[1] 程树英[1] 

机构地区：[1]福州大学物理与信息工程学院,福州350002

出　　处：《扬州大学学报（自然科学版）》2006年第2期39-42,共4页Journal of Yangzhou University：Natural Science Edition

基　　金：福建省教育厅科研基金资助项目(JA03009;JB04046);福州大学科技发展基金项目(2005-XY-14)

摘　　要：首先采用真空热蒸发法在玻璃基片上沉积厚度约为500 nm的铁膜,然后对铁膜在温度为553～673 K的条件下恒温硫化6 h,制备FeS2薄膜.对制备的薄膜进行X射线衍射和显微结构分析,发现：合适的硫化温度为603～653 K,所得薄膜为单一物相的FeS2薄膜,n（S）/n（Fe）值为1.94～1.96,接近理想化学配比,薄膜晶粒大小均匀,表面致密.About 500 nm thick Fe thin films were deposited on the glass substrate by thermal evaporation firstly, and then they were sulfurized at different temperature to synthesize pyrite thin films. In order to study the effect of sulfidation temperature on the pyrite thin films, the Fe thin films were sulfurized at temperature of 553～673 K, respectively for 6 h. The resulting films were characterized by Xray diffract and mierostrueture analysis. It was found that ideal FeS2 films with n（S）/n（Fe） of 1.94～1.96 have been prepared under the optimum sulfidation temperature of about 603～653 K and the films are uniform and dense.

关 键 词：二硫化铁薄膜 硫化 温度 性能 

分 类 号：TM914.4[电气工程—电力电子与电力传动] TN305.2[电子电信—物理电子学]