YVO_4晶体的高效受激拉曼散射  

Efficient Stimulated Raman Scattering of YVO_4 Crystal

作　　者：胡大伟[1] 于浩海[1] 王正平[1] 张怀金[1] 许心光[1] 王继扬[1] 邵宗书[1] 

机构地区：[1]山东大学晶体材料国家重点实验室,济南250100

出　　处：《光学学报》2006年第6期918-920,共3页Acta Optica Sinica

基　　金：国家自然科学基金(60508010;50590401);教育部优秀青年教师资助计划;教育部留学回国人员科研启动基金(2004.527);山东省自然科学基金(Y2004F01)资助课题

摘　　要：报道了YVO4晶体在532 nm、30 ps脉冲下的的高效受激拉曼散射。采用腔外单次通过方式测量了不同长度YVO4晶体1阶斯托克斯受激拉曼散射的阈值,并得到该晶体的稳态增益系数为16.0±0.5 cm/GW。实验中观察到2阶斯托克斯线(558.6 nm5、87.8 nm)和1阶反斯托克斯线(508.0 nm),受激拉曼散射的整体转换效率高于50%。The stimulated Raman scattering （SRS） of 532 nm, 30 ps pulse was investigated in YVO4 crystal samples. In an external single-pass configuration, the SRS thresholds for the first Stokes line were measured for different crystal lengths, and the steady-state gain coefficient was calculated to be 16.0±0. 5 cm/GW. In this experiment, the second Stokes line （558.6 nm, 587.8 nm） as well as the first anti-Stokes line （508.0 nm） was also observed. The total conversion efficiency of SRS was higher than 50%.

关 键 词：非线性光学 受激拉曼散射 阈值 稳态增益系数 YVO4晶体 

分 类 号：O437.3[机械工程—光学工程]