高性能AISiCp封装技术  

Packaging Technology Using High-performance Aluminum Silicon Carbide

作　　者：汪奕[1] 刘捷[1] 

机构地区：[1]南京电子技术研究所,江苏南京210013

出　　处：《电子机械工程》2006年第3期27-29,33,共4页Electro-Mechanical Engineering

摘　　要：A lSiCp封装构件具有众多电子领域应用所需的优异性能:低密度、高热导率、高刚度和可设计调节的热膨胀系数。与Cu/W、Cu/Mo散热基板和Kovar外壳相比,A lSiCp电子封装构件可明显减轻重量,而采用近净成形的铸造工艺,在成本和生产效率上也可与A l合金外壳相媲美。Light weight, high thermal conductivity, high rigidity and controllable coefficient of thermal expansion （CTE） properties of AISiCp are desirable properties for many electronic applications. Because of the close match in CTE, ceramic substrates and semiconductor dies can be directly attached to AISiCp components. The AISiCp composite provides significant weight advantage over Cu/W, Cu/Mo heat dissipaters and Kovar housings while the casting process permits custom and cost effective solutions to replace aluminum housings.

关 键 词：AISiCp电子封装材料 预制件 液相浸渗 热膨胀系数 高热导率 表面镀涂 

分 类 号：TN305.94[电子电信—物理电子学]