Nd_(1.85)Ce_(0.15)CuO_(4-δ)单晶c-轴方向电阻的低场行为  

Resistivity of Nd_(1.85)Ce_(0.15)CuO_(4-δ) single crystal along c-axis in lower field

作　　者：李配军[1] 王智河[1] 白忠[1] 聂阳[1] 邱里[1] 徐小农[1] 

机构地区：[1]南京大学物理系固体微结构国家重点实验室,南京210093

出　　处：《物理学报》2006年第6期3018-3021,共4页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:10174033);南京大学预研基金资助的课题~~

摘　　要：采用自助熔剂缓冷法成功地生长出了Nd1·85Ce0·15CuO4-δ单晶,其零场下零电阻温度约为21K.在0—0·5T范围内分别测量了磁场平行和垂直样品表面的电阻转变曲线以及0·5T不同角度下的电阻转变曲线.结果显示磁场平行和垂直样品表面时的转变温度Tp随磁场的变化均服从H=H0(1-Tp(h)/Tp(0))2关系.0·5T不同角度下的转变温度Tp符合有效质量模型,即Tp∝H1/2(cos2θ+sin2θ/γ2)1/4.该单晶的各向异性因子γ约为45.Nd1.85Ce0.15CuO4-σ single crystals with zero-resistance temperature Tc0≈21K were successfully grown by self-flux slow cooling method. We have measured the resistivity transition curves along the c-axis in different fields parallel or perpendicular to the sample surface, respectively, and at fixed field H = 0.5T for various angles. The result shows that the field dependence of differential-resistance peak temperature Tp follows the formula H = H0 （ 1 - Tp （ h ） / Tp （0） ）^2 for H//c-axis and H//ab-plane, respectively. The angular dependence of peak temperature Tp can be scaled by the effective mass model as Tp ∝ H1/2 （cos^2θ ＋ sin^2θ/γ^2） 1/4 . The anisotropic parameter γ of the crystal is about 45.

关 键 词：Nd1.85Ce0.15CuO4-8单晶 输运性质 

分 类 号：O738[理学—晶体学]