Analysis of the injection layer of PTCDA in OLEDs using x-ray photoemission spectroscopy and atomic force microscopy  

作　　者：欧谷平 宋珍 吴有余 陈小强 张福甲 

机构地区：[1]School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China [2]School of Physics, Hunan University of Science and Technology, Xiangtan 411201, China [3]School of Basic Courses, Beijing Institute of Machinery, Beijing 100085, China

出　　处：《Chinese Physics B》2006年第6期1296-1300,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China （Grant No 60276026） and the Natural Science Foundation of Gansu Province, China （Grant No ZS031-A25-012-G）.

摘　　要：Through the investigation of the sample surface and interface of 3, 4, 9, 10-perylenetetracarboxylic dianhydride （PTCDA）/indium-tin-oxide （ITO） thin films using atomic force microscopy, it has been found that the surface is complanate, the growth is uniform and the defects cover basically the surface of ITO. Furthermore, the number of pinholes is small. The analysis of the sample surface and interface further verifies this result by using x-ray photoemission spectroscopy. At the same time, PTCDA is found to have the ability of restraining the diffusion of chemical constituents from ITO to the hole transport layer, which is beneficial to the improvement of the performance and the useful lifetime of the organic light emitting diodes （OLEDs）.Through the investigation of the sample surface and interface of 3, 4, 9, 10-perylenetetracarboxylic dianhydride （PTCDA）/indium-tin-oxide （ITO） thin films using atomic force microscopy, it has been found that the surface is complanate, the growth is uniform and the defects cover basically the surface of ITO. Furthermore, the number of pinholes is small. The analysis of the sample surface and interface further verifies this result by using x-ray photoemission spectroscopy. At the same time, PTCDA is found to have the ability of restraining the diffusion of chemical constituents from ITO to the hole transport layer, which is beneficial to the improvement of the performance and the useful lifetime of the organic light emitting diodes （OLEDs）.

关 键 词：atomic force microscopy x-ray photoemission spectroscopy PTCDA/ITO 

分 类 号：O438[机械工程—光学工程] TN16[理学—光学]