新型空穴传输材料N,N′-二苯基-N,N′-二(3-甲苯基)-4,4′-联萘胺的合成、薄膜发光与能级比较  

Synthesis,thin film photoluminescence and energy level comparison of novel hole transport material of N,N′-diphenyl-N,N′-bis(3-methylphenyl)-4,4′-naphthidine

作　　者：黄丽群[1] 刘艳珠[1] 杨长剑[1] 易春[1] 刘坚[1] 邱萍[1] 高希存[1] 

机构地区：[1]南昌大学理学院

出　　处：《化学试剂》2006年第5期290-292,共3页Chemical Reagents

基　　金：教育部留学基金项目(Z02873)资助;江西省教育厅留学基金项目(Z02803)资助;南昌大学校基金项目(Z02913)资助。

摘　　要：将有机电致发光中最常用的空穴传输材料N,N′-二苯基N,N′-二(3甲苯基)-4,4-′联苯胺(TPD)中的联苯以联萘代替,合成了新型空穴传输材料N,N′-二苯基N,N′-二(3-甲苯基-)4,4′-联萘胺(PMPN)。与TPD在熔点、薄膜发光、量子效率和电化学行为上进行了比较。PMPN比TPD(m.p.175℃)有稍低的熔点、稍高的电离势,更高的薄膜荧光量子效率。联萘的引入可以增大体系的共轭作用,对载流子传输有益。通过构效关系的分析,可以对进一步合成高性能空穴材料进而得到高性能的有机电致发光器件有所借鉴。A novel hole transport material, N, N＇-diphenyl-N, N＇-bis （3-methylphenyl）-4, 4＇-naphthidine （PMPN） was synthesized using 4, 4＇-naphthidine as the starting material. The structure was characterized by elemental analysis and NMR. The melting point, thin film phtoluminescence as well as electrochemical behavior of PMPN was compared with those of TPD. PMPN showed higher quantum efficiency, approximately identical ionization potential and slightly lower melting point compared to TPD. The structure-property analysis of PMPN should be helpful to designing new better hole transport material.

关 键 词：空穴传输材料 N N'-二苯基-N N'-二(3-甲苯基)-4 4'-联萘胺 合成 构效关系 

分 类 号：O621.3[理学—有机化学]