(110)取向镍酸镧导电薄膜的制备及性能研究  

Study on Preparation and Property of (110)-Oriented LaNiO3 Conduction Thin Films

作　　者：蔡洪涛[1] 李幸福[2] 张新安[1] 丁玲红[1] 张伟风[1] 

机构地区：[1]河南大学,河南开封475001 [2]华北水利水电学院,河南郑州450011

出　　处：《天中学刊》2006年第2期25-27,共3页Journal of Tianzhong

基　　金：河南省高等学校创新人才培养工程资助课题

摘　　要：采用化学溶液法在SiO2/Si(100)衬底上制备了LaNiO3导电薄膜,研究不同热解温度、不同薄膜厚度对LNO薄膜结构和导电性的影响,结果发现薄膜均呈现(110)择优取向生长,尤其是650°C退火6层的薄膜(110)相对取向度最大为2.05,750°C退火的薄膜电阻率最小,且电阻率随时间和厚度的增加而变大.By using the chemical solution decomposition method（CSD）, LaNiO3 thin conduction films on SiO2/Si（100） substrates have been prepared, different effects of different annealing temperature and thickness of thin films on the crystallinity and resistivity of LaNiO3 thin films been analyzed. Results show that all the thin films have taken on enhanced （110）-oriented growth, especially the sixth thin film layer at 650 ℃ have the maximum relative orient degree 2.05. Thin films crystallized at 750 ℃ have the lowest resistivity and the resistivity of LaNiO3 decreases with the increasing of the time and thickness of the thin film.

关 键 词：LANIO3 CSD (110)取向 电阻率 XRD 

分 类 号：O459[理学—无线电物理]