阳极焊过渡层钠硼硅系玻璃薄膜的制备  

Deposition Technique of Na_2O-B_2O_3-SiO_2 Glass Film Transition Layer for Anodic Bonding

作　　者：阴旭[1] 刘翠荣[1] 孟庆森[2] 

机构地区：[1]太原科技大学,山西太原030024 [2]太原理工大学,山西太原030024

出　　处：《机械工程与自动化》2006年第3期64-65,68,共3页Mechanical Engineering & Automation

基　　金：国家自然科学基金资助项目(50375105)

摘　　要：采用射频磁控溅射法在Z rO2陶瓷衬底上制备钠硼硅系玻璃薄膜,目的是以这层薄膜作为过渡层实现Z rO2精细陶瓷与单晶S i之间的阳极焊,通过XRD、EDS和SEM等测试手段对薄膜的物质结构和化学成分进行了多方面的分析,结果表明这种工艺是可行的。In this paper,a study was carried out on the deposition technique of Na2O-B2O3-SiO2 system glass film by RF magnetron sputtering on ZrO2 porcelain substrate. The film is made as transition layer. Anodic bonding between ZrO2 porcelain and Silicon is realized by the transition layer. The film of Na2O-B2O3-SiO2 system glass has been analysed for matter structure and chemical component by X-ray powder diffraction and EDS. The film is investigated by using SEM and electron microprobe analysis. The result shows the technique is feasibility.

关 键 词：阳极焊 磁控溅射 钠硼硅系玻璃薄膜 

分 类 号：TG42[金属学及工艺—焊接]